Study of Epitaxy by RHEED(Reflection High Energy Electron Diffraction)-TRAXS(Total Reflection Angle X-Ray Spectroscopy).
نویسندگان
چکیده
منابع مشابه
Nanostructure by high-energy X-ray diffraction
X-Ray Diffraction (XRD) has long been used to determine the atomic-scale structure of materials. This technique is based on the fact that the wavelength of X-rays is comparable to the distances between atoms in condensed matter. When a material exhibiting a long-range (i.e. at least micrometers), periodic atomic order, such as a crystal, is irradiated with X-rays it acts as an extended, well-de...
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Epitaxy of Al films deposited on GaN has been studied using reflection high-energy electron diffraction ~RHEED!, atomic force microscopy ~AFM!, x-ray diffraction, and ion channeling techniques. Al ~111! films have been found to grow epitaxially on GaN ~0001! surfaces with Al ^21̄ 1̄&iGaN^21̄ 1̄0&. For growth at 15 and 150 °C with a deposition rate of 0.26 Å/s, the epitaxial quality of the film was ...
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ژورنال
عنوان ژورنال: Analytical Sciences
سال: 1995
ISSN: 0910-6340,1348-2246
DOI: 10.2116/analsci.11.539